v rrm = 35 v i f(av) = 600 a features ? high surge capability twin tower package ? type 35 v v rrm ? not esd sensitive parameter mbr60035ct(r) l unit 35 v 25 v 35 v conditions symbol v rrm v rms v maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage low v f silicon power schottky diode mbr60035ct(r)l maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) 35 v -55 to 150 c -55 to 150 c parameter mbr60035ct(r) l unit 600 a 4000 a 0.60 3 300 thermal characteristics maximum thermal resistance, junction - case (per leg) 0.28 c/w maximum instantaneous forward voltage (per leg) maximum instantaneous reverse current at rated dc blocking voltage (per leg) i r t j = 100 c t p = 8.3 ms, half sine i fsm peak forward surge current (per leg) i fm = 300 a, tj = 25 c t j = 25 c v f storage temperature t c = 100 c v dc t j a verage forward current (per pkg) i f(av) electrical characteristics, at tj = 25 c, unless otherwise specified conditions t stg symbol maximum dc blocking voltage ma v r jc operating temperature www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 1
mbr60035ct(r)l www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. mbr60035ct(r)l www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 3
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